Sensitivity studies for volume averaged models of plasma etch reactors

• Verfasst von: Kleditzsch, Stefan [VerfasserIn]
• Verfasst von: Riedel, Uwe [VerfasserIn]
• Titel: Sensitivity studies for volume averaged models of plasma etch reactors
• Verf.angabe: S. Kleditzsch, U. Riedel
• Umfang: 4 S.
• Fussnoten: Gesehen am 02.10.2017
• Titel Quelle: Enthalten in: Surface and coatings technology
• Jahr Quelle: 2001
• Band/Heft Quelle: 142(2001), Supplement C, S. 536-539
• ISSN Quelle: 1879-3347
• DOI: doi:10.1016/S0257-8972(01)01068-4
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1563999668

Abstract

A well-stirred reactor model is employed to model the etching of silicon in low pressure chlorine/argon plasmas. The model gives the spatially averaged species composition and etch rate in a plasma etch reactor by solving conservation equations for species, mass and electron energy distribution function (EEDF). Systematic sensitivity analyses, made possible by a new iterative approach, allows the identification of key parameters for improved fault detection and model based process control of plasma reactors.