Orbital-assisted metal-insulator transition in VO2

• Verfasst von: Haverkort, Maurits W. [VerfasserIn]
• Titel: Orbital-assisted metal-insulator transition in VO2
• Verf.angabe: M.W. Haverkort, Z. Hu, A. Tanaka, W. Reichelt, S.V. Streltsov, M.A. Korotin, V.I. Anisimov, H.H. Hsieh, H.-J. Lin, C.T. Chen, D.I. Khomskii, and L.H. Tjeng
• Fussnoten: Im Titel ist "2" tiefgestellt ; Gesehen am 28.11.2017
• Titel Quelle: Enthalten in: De.arxiv.org
• Jahr Quelle: 2005
• Band/Heft Quelle: (2005) Artikel-Nummer 0509368, 5 Seiten
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 156575557X

Abstract

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective band widths are reduced, that the system becomes more 1-dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.