Numerical simulation of organic semiconductor devices with high carrier densities

• Verfasst von: Stodtmann, Sven [VerfasserIn]
• Verfasst von: Lee, R. M. [VerfasserIn]
• Verfasst von: Weiler, Christoph Karl Felix [VerfasserIn]
• Titel: Numerical simulation of organic semiconductor devices with high carrier densities
• Verf.angabe: S. Stodtmann, R.M. Lee, C.K.F. Weiler, and A. Badinski
• E-Jahr: 2012
• Jahr: 10 December 2012
• Umfang: 9 S.
• Fussnoten: Gesehen am 09.10.2020
• Titel Quelle: Enthalten in: Journal of applied physics
• Ort Quelle: Melville, NY : American Inst. of Physics, 1931
• Jahr Quelle: 2012
• Band/Heft Quelle: 112(2012), 11, Seite 114909
• ISSN Quelle: 1089-7550
• DOI: doi:10.1063/1.4768710
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1572275626

Abstract

We give a full description of the numerical solution of a general charge transport model for doped disordered semiconductors with arbitrary field- and density-dependent mobilities. We propose a suitable scaling scheme and generalize the Gummel iterative procedure, giving both the discretization and linearization of the van Roosbroeck equations for the case when the generalized Einstein relation holds. We show that conventional iterations are unstable for problems with high doping, whereas the generalized scheme converges. The method also offers a significant increase in efficiency when the injection is large and reproduces known results where conventional methods converge.