Electric-field-controlled dopant distribution in organic semiconductors

• Verfasst von: Müller, Lars [VerfasserIn]
• Verfasst von: Rhim, Seon-Young [VerfasserIn]
• Verfasst von: Sivanesan, Vipilan [VerfasserIn]
• Verfasst von: Hietzschold, Sebastian [VerfasserIn]
• Verfasst von: Beck, Sebastian [VerfasserIn]
• Verfasst von: Pucci, Annemarie [VerfasserIn]
• Verfasst von: Kowalsky, Wolfgang [VerfasserIn]
• Titel: Electric-field-controlled dopant distribution in organic semiconductors
• Verf.angabe: Lars Müller, Seon-Young Rhim, Vipilan Sivanesan, Dongxiang Wang, Sebastian Hietzschold, Patrick Reiser, Eric Mankel, Sebastian Beck, Stephen Barlow, Seth R. Marder, Annemarie Pucci, Wolfgang Kowalsky, Robert Lovrincic
• E-Jahr: 2017
• Jahr: 06 June 2017
• Umfang: 7 S.
• Fussnoten: Gesehen am 15.12.2021
• Titel Quelle: Enthalten in: Advanced materials
• Ort Quelle: Weinheim : Wiley-VCH, 1989
• Jahr Quelle: 2017
• Band/Heft Quelle: 29(2017,30) Artikelnummer 1701466, 7 Seiten
• ISSN Quelle: 1521-4095
• DOI: doi:10.1002/adma.201701466
• Datenträger: Online-Ressource
• Sprache: eng
• Sach-SW: memory devices
• Sach-SW: molecular doping
• Sach-SW: molecular drift and diffusion
• Sach-SW: molecular p-dopant
• Sach-SW: organic semiconductors
• K10plus-PPN: 157831805X

Abstract

Stable electrical doping of organic semiconductors is fundamental for the functionality of high performance devices. It is known that dopants can be subjected to strong diffusion in certain organic semiconductors. This work studies the impact of operating conditions on thin films of the polymer poly(3-hexylthiophene) (P3HT) and the small molecule Spiro-MeOTAD, doped with two differently sized p-type dopants. The negatively charged dopants can drift upon application of an electric field in thin films of doped P3HT over surprisingly large distances. This drift is not observed in the small molecule Spiro-MeOTAD. Upon the dopants’ directional movement in P3HT, a dedoped region forms at the negatively biased electrode, increasing the overall resistance of the thin film. In addition to electrical measurements, optical microscopy, spatially resolved infrared spectroscopy, and scanning Kelvin probe microscopy are used to investigate the drift of dopants. Dopant mobilities of 10−9 to 10−8 cm2 V−1 s−1 are estimated. This drift over several micrometers is reversible and can be controlled. Furthermore, this study presents a novel memory device to illustrate the applicability of this effect. The results emphasize the importance of dynamic processes under operating conditions that must be considered even for single doped layers.