Characterization results of a HVCMOS sensor for ATLAS

• Verfasst von: Ehrler, Felix [VerfasserIn]
• Verfasst von: Weber, Alena [VerfasserIn]
• Titel: Characterization results of a HVCMOS sensor for ATLAS
• Verf.angabe: F. Ehrler, M. Benoit, D. Dannheim, M. Kiehn, A. Nürnberg, I. Perić, M. Prathapan, R. Schimassek, T. Vanat, M. Vicente, A. Weber, H. Zhang
• E-Jahr: 2019
• Jahr: August 2019
• Jahr des Originals: 2018
• Umfang: 3 S.
• Fussnoten: Available online 23 August 2018 ; Gesehen am 09.07.2019
• Titel Quelle: Enthalten in: Nuclear instruments & methods in physics research / A
• Ort Quelle: Amsterdam : North-Holland Publ. Co., 1984
• Jahr Quelle: 2019
• Band/Heft Quelle: 936(2019), Seite 654-656
• ISSN Quelle: 0168-9002
• DOI: doi:10.1016/j.nima.2018.08.069
• Datenträger: Online-Ressource
• Sprache: eng
• Sach-SW: HVCMOS
• Sach-SW: HVMAPS
• Sach-SW: ATLAS
• Sach-SW: IsoPMOS
• Sach-SW: PPtB
• Sach-SW: Time walk correction by adaptive ToT
• K10plus-PPN: 1668861542

Abstract

High-voltage CMOS (HVCMOS) pixel sensors are depleted monolithic active n-in-p diode pixel sensors implemented in standard commercial CMOS processes. A substantial part of the readout electronics is placed inside each pixel. Due to high radiation tolerance and fast signal generation (Perić, 2017) [1], HVCMOS sensors are going to be used (Mu3e, PSI) or are suggested for usage (ATLAS and CLIC, CERN) in High Energy Physics experiments. In this article characterization results of the ATLASpix_Simple sensor are presented. Special attention was paid to the novel time-over-threshold (ToT) measurement with adaptive sampling rate.