Kelvin-Probe based carrier-mobility extraction reviewed by finite element simulation

• Verfasst von: Strunk, Karl-Philipp [VerfasserIn]
• Verfasst von: Ullrich, Alexander P. [VerfasserIn]
• Verfasst von: Kebrich, Sebastian [VerfasserIn]
• Verfasst von: Melzer, Christian [VerfasserIn]
• Titel: Kelvin-Probe based carrier-mobility extraction reviewed by finite element simulation
• Verf.angabe: Karl-Philipp Strunk, Alexander P. Ullrich, Sebastian Kebrich, Christian Melzer
• Jahr: 2019
• Umfang: 6 S.
• Fussnoten: Available online 14 December 2018 ; Gesehen am 12.11.2019
• Titel Quelle: Enthalten in: Synthetic metals
• Ort Quelle: Amsterdam [u.a.] : Elsevier Science, 1979
• Jahr Quelle: 2019
• Band/Heft Quelle: 247(2019), Seite 177-182
• DOI: doi:10.1016/j.synthmet.2018.12.004
• Datenträger: Online-Ressource
• Sprache: eng
• Sach-SW: Charge transport
• Sach-SW: Electrical properties
• Sach-SW: Organic semiconductors
• Sach-SW: Simulation
• Sach-SW: Surface potential
• K10plus-PPN: 1681509970

Abstract

Periodic charging and discharging of an extended metal insulator semiconductor stack from a confined injection contact results in a lateral modulation of the carrier density. It has been demonstrated previously that this redistribution of carriers in the plane of the MIS capacitor is confined to a region near the contacts whose extension relates to the transport properties of the charged channel. Thus, monitoring the surface potential evolution with a Kelvin-Probe gives access to the transport properties of the semiconductor. Here, we investigate on the basis of 2D finite element calculations the rigidity of this proposed method. By using a bipolar drift-diffusion approach, we investigate the impact of the sample geometry, the minority and majority carrier mobility, doping, trapping and the injection properties on the extracted transport parameters. It will be shown that the proposed technique is a reliable method, which gives access to the mobility of the majority carrier species.