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Status: Bibliographieeintrag

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Verfasst von:Gallina, Giacomo [VerfasserIn]   i
 Retière, F. [VerfasserIn]   i
 Giampa, P. [VerfasserIn]   i
 Kröger, Jens [VerfasserIn]   i
 Margetak, P. [VerfasserIn]   i
 Byrne Mamahit, S. [VerfasserIn]   i
 De St. Croix, A. [VerfasserIn]   i
 Edaltafar, F. [VerfasserIn]   i
 Martin, L. [VerfasserIn]   i
 Massacret, N. [VerfasserIn]   i
 Ward, M. [VerfasserIn]   i
 Zhang, G. [VerfasserIn]   i
Titel:Characterization of SiPM avalanche triggering probabilities
Verf.angabe:G. Gallina, F. Retière, P. Giampa, J. Kroeger, P. Margetak, S. Byrne Mamahit, A. De St. Croix, F. Edaltafar, L. Martin, N. Massacret, M. Ward, G. Zhang
E-Jahr:2019
Jahr: 28 August 2019
Umfang:7 S.
Fussnoten:Gesehen am 04.12.2019
Titel Quelle:Enthalten in: Institute of Electrical and Electronics EngineersIEEE transactions on electron devices
Ort Quelle:New York, NY : IEEE, 1952
Jahr Quelle:2019
Band/Heft Quelle:66(2019), 10, Seite 4228-4234
ISSN Quelle:1557-9646
Abstract:Silicon photo-multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The photon detection efficiency (PDE) is the combined probability that a photon is absorbed in the active volume of the device with a subsequently triggered avalanche. Absorption and avalanche triggering probabilities are correlated since the latter probability depends on where the photon is absorbed. In this article, we introduce a physics-motivated parameterization of the avalanche triggering probability that describes the PDE of a SiPM as a function of its reverse bias voltage, at different wavelengths. This parameterization is based on the fact that in p-on-n SiPMs, the induced avalanches are electron-driven in the ultraviolet (UV) range, while they become increasingly hole-driven toward the infrared range. The model has been successfully applied to characterize two Hamamatsu multi-pixel photon counters (MPPCs) and one Fondazione-Bruno-Kessler (FBK) SiPM, and it can be extended to other SiPMs. Furthermore, this model provides key insight into the electric field structure within SiPMs, which can explain the limitation of the existing devices and be used to optimize the performance of the future SiPMs.
DOI:doi:10.1109/TED.2019.2935690
URL:Bitte beachten Sie: Dies ist ein Bibliographieeintrag. Ein Volltextzugriff für Mitglieder der Universität besteht hier nur, falls für die entsprechende Zeitschrift/den entsprechenden Sammelband ein Abonnement besteht oder es sich um einen OpenAccess-Titel handelt.

Volltext: https://doi.org/10.1109/TED.2019.2935690
 DOI: https://doi.org/10.1109/TED.2019.2935690
Datenträger:Online-Ressource
Sprache:eng
Sach-SW:Absorption
 avalanche photodiodes
 avalanche triggering probability
 Avalanche triggering probability (ATP)
 Charge carrier processes
 Cherenkov light
 combined probability
 electric field structure
 Fondazione-Bruno-Kessler SiPM
 future SiPMs
 gamma-ray detection
 Geiger counters
 Geiger-mode avalanche
 Hamamatsu multipixel photon counters
 induced avalanches
 infrared range
 medical-imaging applications
 p-on-n SiPM
 PDE
 photo-generated carriers
 photomultipliers
 photon counting
 photon detection efficiency
 photon detection efficiency (PDE)
 Photonics
 Physics
 physics-motivated parameterization
 reverse bias voltage
 scintillation
 scintillation counters
 Silicon
 silicon photo-multiplier (SiPM)
 silicon photo-multipliers
 silicon radiation detectors
 SiPM avalanche triggering probabilities
 SiPMs measure single photons
 ultraviolet range
 Voltage measurement
K10plus-PPN:168420559X
Verknüpfungen:→ Zeitschrift

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