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Verfasst von:Sultan, D. M. S. [VerfasserIn]   i
 Schöning, André [VerfasserIn]   i
 Herkert, Adrian [VerfasserIn]   i
 Augustin, Heiko [VerfasserIn]   i
Titel:Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation
Verf.angabe:DMS Sultan, S. Gonzalez Sevilla, D. Ferrere, G. Iacobucci, E. Zaffaroni, W. Wong, M.V. Barrero Pinto, M. Kiehn, M. Prathapan, F. Ehrler, I. Peric, A. Miucci, J. Kenneth Anders, A. Fehr, M. Weber, A. Schoening, A. Herkert, H. Augustin, and M. Benoit
E-Jahr:2019
Jahr:7 May 2019
Umfang:? S.
Fussnoten:Gesehen am 10.03.2020
Titel Quelle:Enthalten in: Journal of Instrumentation
Ort Quelle:London : Inst. of Physics, 2006
Jahr Quelle:2019
Band/Heft Quelle:14(2019,5) Artikel-Nummer C05003, ? Seiten
ISSN Quelle:1748-0221
Abstract:In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trapping effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective doping concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2× 1015 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.
DOI:doi:10.1088/1748-0221/14/05/C05003
URL:Bitte beachten Sie: Dies ist ein Bibliographieeintrag. Ein Volltextzugriff für Mitglieder der Universität besteht hier nur, falls für die entsprechende Zeitschrift/den entsprechenden Sammelband ein Abonnement besteht oder es sich um einen OpenAccess-Titel handelt.

Volltext: https://doi.org/10.1088/1748-0221/14/05/C05003
 DOI: https://doi.org/10.1088/1748-0221/14/05/C05003
Datenträger:Online-Ressource
Sprache:eng
K10plus-PPN:1691995355
Verknüpfungen:→ Zeitschrift

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