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Verfasst von:Hess, Peter [VerfasserIn]   i
Titel:Thickness of elemental and binary single atomic monolayers
Verf.angabe:Peter Hess
E-Jahr:2020
Jahr:03 December 2019
Umfang:15 Seiten S.
Fussnoten:Gesehen am 31.03.2020
Titel Quelle:Enthalten in: Nanoscale horizons
Ort Quelle:Cambridge : Royal Society of Chemistry, 2015
Jahr Quelle:2020
Band/Heft Quelle:5(2020), 3, Seite 385-399
ISSN Quelle:2055-6764
Abstract:The thickness of monolayers is a fundamental property of two-dimensional (2D) materials that has not found the necessary attention. It plays a crucial role in their mechanical behavior, the determination of related physical properties such as heat transfer, and especially the properties of multilayer systems. Measurements of the thickness of free-standing monolayers are widely lacking and notoriously too large. Consistent thicknesses have been reported for single layers of graphene, boronitrene, and SiC derived from interlayer spacing measured by X-ray diffraction in multilayer systems, first-principles calculations of the interlayer spacing, and tabulated van der Waals (vdW) diameters. Furthermore, the electron density-based volume model agrees with the geometric slab model for graphene and boronitrene. For other single-atom monolayers DFT calculations and molecular dynamics (MD) simulations deliver interlayer distances that are often much smaller than the vdW diameter, owing to further electrostatic and (weak) covalent interlayer interaction. Monolayers strongly bonded to a surface also show this effect. If only weak vdW forces exist, the vdW diameter delivers a reasonable thickness not only for free-standing monolayers but also for few-layer systems and adsorbed monolayers. Adding the usually known corrugation effect of buckled or puckered monolayers to the vdW diameter delivers an upper limit of the monolayer thickness. The study presents a reference database of thickness values for elemental and binary group-IV and group-V monolayers, as well as binary III-V and IV-VI compounds.
DOI:doi:10.1039/C9NH00658C
URL:Bitte beachten Sie: Dies ist ein Bibliographieeintrag. Ein Volltextzugriff für Mitglieder der Universität besteht hier nur, falls für die entsprechende Zeitschrift/den entsprechenden Sammelband ein Abonnement besteht oder es sich um einen OpenAccess-Titel handelt.

Volltext: https://doi.org/10.1039/c9nh00658c
 DOI: https://doi.org/10.1039/C9NH00658C
Datenträger:Online-Ressource
Sprache:eng
Sach-SW:2-dimensional topological insulators
 bilayer
 electronic-properties
 field
 hexagonal boron-nitride
 layer
 semiconductor
 stacking order
 stanene
 strain
K10plus-PPN:1693620863
Verknüpfungen:→ Zeitschrift

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