Efficient n-doping and hole blocking in single-walled carbon nanotube transistors with 1,2,4,5-tetrakis(tetramethylguanidino)ben-zene

• Verfasst von: Schneider, Severin [VerfasserIn]
• Verfasst von: Brohmann, Maximilian [VerfasserIn]
• Verfasst von: Lorenz, Roxana [VerfasserIn]
• Verfasst von: Hofstetter, Yvonne J. [VerfasserIn]
• Verfasst von: Rother, Marcel [VerfasserIn]
• Verfasst von: Sauter, Eric [VerfasserIn]
• Verfasst von: Zharnikov, Michael [VerfasserIn]
• Verfasst von: Vaynzof, Yana [VerfasserIn]
• Verfasst von: Himmel, Hans-Jörg [VerfasserIn]
• Verfasst von: Zaumseil, Jana [VerfasserIn]
• Titel: Efficient n-doping and hole blocking in single-walled carbon nanotube transistors with 1,2,4,5-tetrakis(tetramethylguanidino)ben-zene
• Verf.angabe: Severin Schneider, Maximilian Brohmann, Roxana Lorenz, Yvonne J. Hofstetter, Marcel Rother, Eric Sauter, Michael Zharnikov, Yana Vaynzof, Hans-Jörg Himmel, and Jana Zaumseil
• E-Jahr: 2018
• Jahr: May 22, 2018
• Umfang: 8 S.
• Fussnoten: Published: May 22, 2018 ; Gesehen am 08.04.2020
• Titel Quelle: Enthalten in: American Chemical SocietyACS nano
• Ort Quelle: Washington, DC : Soc., 2007
• Jahr Quelle: 2018
• Band/Heft Quelle: 12(2018), 6, Seite 5895-5902
• ISSN Quelle: 1936-086X
• DOI: doi:10.1021/acsnano.8b02061
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1694257436

Abstract

Efficient, stable, and solution-based n-doping of semiconducting single-walled carbon nanotubes (SWCNTs) is highly desired for complementary circuits but remains a significant challenge. Here, we present 1,2,4,5-tetrakis(tetramethylguanidino)benzene (ttmgb) as a strong two-electron donor that enables the fabrication of purely n-type SWCNT field-effect transistors (FETs). We apply ttmgb to networks of monochiral, semiconducting (6,5) SWCNTs that show intrinsic ambipolar behavior in bottom-contact/top-gate FETs and obtain unipolar n-type transport with 3-5-fold enhancement of electron mobilities (approximately 10cm2V-1s-1), while completely suppressing hole currents, even at high drain voltages. These n-type FETs show excellent on/off current ratios of up to 108, steep subthreshold swings (80-100 mV/dec), and almost no hysteresis. Their excellent device characteristics stem from the reduction of the work function of the gold electrodes via contact doping, blocking of hole injection by ttmgb2+ on the electrode surface, and removal of residual water from the SWCNT network by ttmgb protonation. The ttmgb-treated SWCNT FETs also display excellent environmental stability under bias stress in ambient conditions. Complementary inverters based on n- and p-doped SWCNT FETs exhibit rail-to-rail operation with high gain and low power dissipation. The simple and stable ttmgb molecule thus serves as an example for the larger class of guanidino-functionalized aromatic compounds as promising electron donors for high-performance thin film electronics.