Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe

• Verfasst von: Milotti, Valeria [VerfasserIn]
• Verfasst von: Pietsch, Manuel [VerfasserIn]
• Verfasst von: Strunk, Karl-Philipp [VerfasserIn]
• Verfasst von: Melzer, Christian [VerfasserIn]
• Titel: Measuring the lateral charge-carrier mobility in metal-insulator-semiconductor capacitors via Kelvin-probe
• Verf.angabe: Valeria Milotti, Manuel Pietsch, Karl-Philipp Strunk, and Christian Melzer
• E-Jahr: 2018
• Jahr: 4 January 2018
• Umfang: 7 S.
• Fussnoten: Gesehen am 20.04.2020
• Titel Quelle: Enthalten in: Review of scientific instruments
• Ort Quelle: [S.l.] : American Institute of Physics, 1930
• Jahr Quelle: 2018
• Band/Heft Quelle: 89(2018,1) Artikel-Nummer 013902, 7 Seiten
• ISSN Quelle: 1089-7623
• DOI: doi:10.1063/1.5002629
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 169500731X

Abstract

We report a Kelvin-probe method to investigate the lateral charge-transport properties of semiconductors, most notably the charge-carrier mobility. The method is based on successive charging and discharging of a pre-biased metal-insulator-semiconductor stack by an alternating voltage applied to one edge of a laterally confined semiconductor layer. The charge carriers spreading along the insulator-semiconductor interface are directly measured by a Kelvin-probe, following the time evolution of the surface potential. A model is presented, describing the device response for arbitrary applied biases allowing the extraction of the lateral charge-carrier mobility from experimentally measured surface potentials. The method is tested using the organic semiconductor poly(3-hexylthiophene), and the extracted mobilities are validated through current voltage measurements on respective field-effect transistors. Our widely applicable approach enables robust measurements of the lateral charge-carrier mobility in semiconductors with weak impact from the utilized contact materials.