Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors

• Verfasst von: Schießl, Stefan Patrick [VerfasserIn]
• Verfasst von: Fröhlich, Nils Gerrit [VerfasserIn]
• Verfasst von: Held, Martin [VerfasserIn]
• Verfasst von: Gannott, Florentina [VerfasserIn]
• Verfasst von: Schweiger, Kai Manuel [VerfasserIn]
• Verfasst von: Forster, Michael [VerfasserIn]
• Verfasst von: Scherf, Ullrich [VerfasserIn]
• Verfasst von: Zaumseil, Jana [VerfasserIn]
• Titel: Polymer-sorted semiconducting carbon nanotube networks for high-performance ambipolar field-effect transistors
• Verf.angabe: Stefan P. Schießl, Nils Fröhlich, Martin Held, Florentina Gannott, Manuel Schweiger, Michael Forster, Ullrich Scherf, and Jana Zaumseil
• Jahr: 2015
• Jahr des Originals: 2014
• Umfang: 8 S.
• Fussnoten: Published December 10, 2014 ; Gesehen am 24.06.2020
• Titel Quelle: Enthalten in: American Chemical SocietyACS applied materials & interfaces
• Ort Quelle: Washington, DC : Soc., 2009
• Jahr Quelle: 2015
• Band/Heft Quelle: 7(2015), 1, Seite 682-689
• ISSN Quelle: 1944-8252
• DOI: doi:10.1021/am506971b
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1702055159

Abstract

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V-1·s-1, low ohmic contact resistance, steep subthreshold swings (0.12-0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61.