Validation of Geant4 pixel detector simulation framework by measurements with the medipix family detectors

• Verfasst von: Krapohl, David [VerfasserIn]
• Verfasst von: Schübel, Armin [VerfasserIn]
• Verfasst von: Fröjdh, Erik [VerfasserIn]
• Verfasst von: Thungström, Göran [VerfasserIn]
• Verfasst von: Fröjdh, Christer [VerfasserIn]
• Titel: Validation of Geant4 pixel detector simulation framework by measurements with the medipix family detectors
• Verf.angabe: David Krapohl, member, IEEE, Armin Schübel, Erik Fröjdh,member, IEEE, Göran Thungström, and Christer Fröjdh, member, IEEE
• Jahr: 2016
• Umfang: 8 S.
• Fussnoten: Gesehen am 07.07.2020
• Titel Quelle: Enthalten in: Institute of Electrical and Electronics EngineersIEEE transactions on nuclear science
• Ort Quelle: New York, NY : IEEE, 1963
• Jahr Quelle: 2016
• Band/Heft Quelle: 63(2016), 3, Seite 1874-1881
• ISSN Quelle: 1558-1578
• DOI: doi:10.1109/TNS.2016.2555958
• Datenträger: Online-Ressource
• Sprache: eng
• Sach-SW: Computational modeling
• Sach-SW: Detectors
• Sach-SW: Electrodes
• Sach-SW: Geometry
• Sach-SW: Medipix
• Sach-SW: Monte Carlo simulation
• Sach-SW: pixel detector simulation
• Sach-SW: Semiconductor device measurement
• Sach-SW: Semiconductor process modeling
• Sach-SW: Solid modeling
• Sach-SW: Technology Computer Aided Design (TCAD)
• Sach-SW: timepix
• K10plus-PPN: 1703864948

Abstract

Monte Carlo simulations are an extensively used tool for developing and understanding radiation detector systems. In this work, we used results of several chips and readout modes of the Medipix detector family to validate a Geant4 based pixel detector framework, developed in our group, that is capable of simulating particle tracking, charge transport in the sensor material and different readout schemes. We experimentally verified the simulation with different detector geometries in terms of pixel pitch and size as well as sensor material and sensor thickness. The single pixel mode (SPM) and charge summing mode (CSM) in Medipix3 were evaluated with fluorescence and synchrotron radiation. The integration of the charge sensitive amplifier functionality in the simulation framework allowed to simulate the time-over-threshold mode of the Timepix chip. Simulation and measurement have been compared in terms of spectral resolution using threshold scans in photon counting mode (Medipix3) and time over threshold mode (Timepix). Further comparisons were done using X-ray tube spectra and beta decay to cover a broad energy range. Additionally, TCAD simulations are performed as a comparison to a well-established simulation method. The results show good agreement between simulation and measurement.