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| Verfasst von: | Peric, Ivan [VerfasserIn]  |
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| | Andreazza, Attilio [VerfasserIn] |
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| | Augustin, Heiko [VerfasserIn] |
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| | Barbero, Marlon [VerfasserIn] |
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| | Benoit, Mathieu [VerfasserIn] |
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| | Casanova, Raimon [VerfasserIn] |
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| | Ehrler, Felix [VerfasserIn] |
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| | Iacobucci, Giuseppe [VerfasserIn] |
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| | Leys, Richard [VerfasserIn] |
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| | Meneses González, Annie [VerfasserIn] |
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| | Pangaud, Patrick [VerfasserIn] |
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| | Prathapan, Mridula [VerfasserIn] |
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| | Schimassek, Rudolf [VerfasserIn] |
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| | Schöning, André [VerfasserIn] |
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| | Figueras, Eva Vilella [VerfasserIn] |
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| | Weber, Alena [VerfasserIn] |
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| | Weber, Michele [VerfasserIn] |
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| | Wong, Winnie [VerfasserIn] |
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| | Zhang, Hui [VerfasserIn] |
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| Titel: | High-voltage CMOS active pixel sensor |
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| Verf.angabe: | Ivan Perić, Attilio Andreazza, Heiko Augustin, Marlon Barbero, Mathieu Benoit, Raimon Casanova, Felix Ehrler, Giuseppe Iacobucci, Richard Leys, Annie Meneses Gonzalez, Patrick Pangaud, Mridula Prathapan, Rudolf Schimassek, André Schöning, Eva Vilella Figueras, Alena Weber, Michele Weber, Winnie Wong, and Hui Zhang |
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| E-Jahr: | 2021 |
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| Jahr: | March 9, 2021 |
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| Umfang: | 15 S. |
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| Fussnoten: | Gesehen am 13.10.2021 |
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| Titel Quelle: | Enthalten in: Institute of Electrical and Electronics EngineersIEEE journal of solid state circuits |
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| Ort Quelle: | New York, NY : IEEE, 1966 |
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| Jahr Quelle: | 2021 |
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| Band/Heft Quelle: | 56(2021), 8 vom: Aug., Seite 2488-2502 |
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| Abstract: | The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors for ionizing particles that can be implemented in CMOS processes with deep n-well option. The pixel contains one sensor electrode formed with a deep n-well implanted in a p-type substrate. CMOS pixel electronics, embedded in shallow wells, are placed inside the deep n-well. By biasing the substrate with a high negative voltage and by the use of a lowly doped substrate, a depleted region depth of at least 30 $\mu \textm$ can be achieved. The electrons generated by a particle are collected by drift, which induces fast detectable signals. This publication presents a 4.2-cm2 large HVCMOS pixel sensor implemented in a commercial 180-nm process on a lowly doped substrate and its characterization. |
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| DOI: | doi:10.1109/JSSC.2021.3061760 |
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| URL: | Bitte beachten Sie: Dies ist ein Bibliographieeintrag. Ein Volltextzugriff für Mitglieder der Universität besteht hier nur, falls für die entsprechende Zeitschrift/den entsprechenden Sammelband ein Abonnement besteht oder es sich um einen OpenAccess-Titel handelt.
Volltext: https://doi.org/10.1109/JSSC.2021.3061760 |
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| | DOI: https://doi.org/10.1109/JSSC.2021.3061760 |
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| Datenträger: | Online-Ressource |
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| Sprache: | eng |
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| Sach-SW: | Active pixel sensors |
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| | Atmospheric measurements |
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| | Detectors |
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| | Intelligent sensors |
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| | ionizing radiation sensors |
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| | particle beam measurements |
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| | Particle measurements |
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| | particle tracking |
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| | Particle tracking |
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| | position-sensitive particle detector |
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| | radiation imaging |
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| | radiation monitoring |
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| | Sensors |
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| | silicon radiation detectors |
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| | smart pixels |
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| | Substrates |
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| K10plus-PPN: | 1773551957 |
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| Verknüpfungen: | → Zeitschrift |
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High-voltage CMOS active pixel sensor / Peric, Ivan [VerfasserIn]; March 9, 2021 (Online-Ressource)
