Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide

• Verfasst von: Assmann, Nicole [VerfasserIn]
• Verfasst von: Persson, Clas [VerfasserIn]
• Verfasst von: Kuznetsov, A. Yu [VerfasserIn]
• Verfasst von: Monakhov, Eduard V. [VerfasserIn]
• Titel: Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide
• Verf.angabe: N. Assmann, C. Persson, A.Yu. Kuznetsov, and E.V. Monakhov
• E-Jahr: 2021
• Jahr: 27 December 2021
• Fussnoten: Gesehen am 23.03.2022
• Titel Quelle: Enthalten in: Applied physics letters
• Ort Quelle: Melville, NY : American Inst. of Physics, 1962
• Jahr Quelle: 2021
• Band/Heft Quelle: 119(2021), 26 vom: Dez., Artikel-ID 262101
• ISSN Quelle: 1077-3118
• DOI: doi:10.1063/5.0074046
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1796367680

Abstract

Nitrogen in group-IV semiconductors has become a well-established element of qubits capable of room-temperature operation. In silicon carbide, nitrogen can occupy different nonequivalent lattice sites, giving rise to different shallow donor states. We report a triplet fine structure in electronic transitions of nitrogen donors on the quasi-cubic carbon site in 4H silicon carbide with activation enthalpies of around 100 meV. The intensities of triplet components have a prominent dependence on the voltage bias. The activation enthalpies of the transitions exhibit the Poole-Frenkel effect, while no bias dependence is observed for the magnitude of splitting. A tentative explanation of the fine structure involves local symmetry changes due to stacking faults.