Enhancement of photodetector responsivity in standard SOI CMOS processes by introducing resonant grating structures

• Verfasst von: Auer, Maximilian [VerfasserIn]
• Verfasst von: Brenner, Karl-Heinz [VerfasserIn]
• Titel: Enhancement of photodetector responsivity in standard SOI CMOS processes by introducing resonant grating structures
• Verf.angabe: M. Auer, K.-H. Brenner
• Jahr: 2011
• Umfang: 5 S.
• Fussnoten: Gesehen am 24.03.2022
• Titel Quelle: Enthalten in: European Optical SocietyJournal of the European Optical Society / Rapid publications
• Ort Quelle: London, 2006
• Jahr Quelle: 2011
• Band/Heft Quelle: 6(2011), Artikel-ID 11014s, Seite 1-5
• ISSN Quelle: 1990-2573
• DOI: doi:10.2971/jeos.2011.11014s
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1796553212

Abstract

A new photodetector concept is described which is fully compatible with the standard SOI CMOS process and does not require any post-processing steps. Our simulations are based on two-dimensional RCWA (Rigorous Coupled Wave Analysis) and local absorption theory (K.-H.Brenner, "Aspects for calculating local absorption with the rigorous coupled-wave method" Optic Express 2010, accepted). The simulations show that optimized lateral grating structures are able to enhance the absorption efficiency of thin semi-conductor detectors by a factor of 32 compared to nonenhanced approaches.