Particle pixel detectors in high-voltage CMOS technology

• Verfasst von: Peric, Ivan [VerfasserIn]
• Verfasst von: Kreidl, Christian [VerfasserIn]
• Verfasst von: Fischer, Peter [VerfasserIn]
• Titel: Particle pixel detectors in high-voltage CMOS technology
• Titelzusatz: new achievements
• Verf.angabe: I. Perić, C. Kreidl, P. Fischer
• Jahr: 2011
• Umfang: 5 S.
• Fussnoten: Available online 23 November 2010 ; Gesehen am 24.10.2022
• Titel Quelle: Enthalten in: Nuclear instruments & methods in physics research / A
• Ort Quelle: Amsterdam : North-Holland Publ. Co., 1984
• Jahr Quelle: 2011
• Band/Heft Quelle: 650(2011), 1, Seite 158-162
• ISSN Quelle: 1872-9576
• DOI: doi:10.1016/j.nima.2010.11.090
• Datenträger: Online-Ressource
• Sprache: eng
• Sach-SW: Capacitive coupled pixel detector—CCPD
• Sach-SW: High-voltage CMOS technology
• Sach-SW: Monolithic pixel detectors
• Sach-SW: Radiation tolerant electronics
• K10plus-PPN: 1819782107

Abstract

Particle pixel detectors in standard high-voltage CMOS technology are a new detector family that allows implementation of low-cost radiation-tolerant detectors with good time resolution. In order to test the concept we have implemented three detector variants. The first variant uses simple four-transistor pixel electronics that allows the rolling-shutter readout. The second variant implements complex CMOS pixel electronics with particle hit detection on pixel level and binary readout. The third variant uses the readout based on the capacitive chip-to-chip signal transmission. In this paper we will present the recent experimental results.