Revealing molecular orbital gating by transition voltage spectroscopy

• Verfasst von: Bâldea, Ioan [VerfasserIn]
• Titel: Revealing molecular orbital gating by transition voltage spectroscopy
• Verf.angabe: Ioan Bâldea
• E-Jahr: 2010
• Jahr: 11 August 2010
• Umfang: 6 S.
• Fussnoten: Gesehen am 25.11.2022
• Titel Quelle: Enthalten in: Chemical physics
• Ort Quelle: Amsterdam [u.a.] : Elsevier Science, 1973
• Jahr Quelle: 2010
• Band/Heft Quelle: 377(2010), 1, Seite 15-20
• DOI: doi:10.1016/j.chemphys.2010.08.009
• Datenträger: Online-Ressource
• Sprache: eng
• Sach-SW: Fowler-Nordheim transition
• Sach-SW: Molecular electronics
• Sach-SW: Molecular orbital gating
• Sach-SW: Quantum transport
• Sach-SW: Single-molecule transistors
• Sach-SW: Transition voltage spectroscopy
• K10plus-PPN: 1823593119

Abstract

Recently, Song et al. [Nature 462, 1039 (2009)] employed transition voltage spectroscopy to demonstrate that the energy εH of the highest occupied molecular orbital (HOMO) of single-molecule transistors can be controlled by a gate potential VG. To demonstrate the linear dependence εH−VG, the experimental data have been interpreted by modeling the molecule as an energy barrier spanning the spatial source-drain region of molecular junctions. Since, as shown in this work, that crude model cannot quantitatively describe the measured I-V-characteristics, it is important to get further support for the linear dependence of εH on VG. The results presented here, which have been obtained within a model of a point-like molecule, confirm this linear dependence. Because the two models rely upon complementary descriptions, the present results indicate that the interpretation of the experimental results as evidence for a gate controlled HOMO is sufficiently general.