Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates

• Verfasst von: Mbenkum, Beri Nsoyani [VerfasserIn]
• Verfasst von: Schneider, Andreas S. [VerfasserIn]
• Verfasst von: Schütz, Gisela [VerfasserIn]
• Verfasst von: Xu, C. [VerfasserIn]
• Verfasst von: Richter, Gunther [VerfasserIn]
• Verfasst von: Aken, Peter A. van [VerfasserIn]
• Verfasst von: Majer, Günter [VerfasserIn]
• Verfasst von: Spatz, Joachim P. [VerfasserIn]
• Titel: Low-temperature growth of silicon nanotubes and nanowires on amorphous substrates
• Verf.angabe: Beri N. Mbenkum, Andreas S. Schneider, Gisela Schütz, C. Xu, Gunther Richter, Peter A. van Aken, Günter Majer, and Joachim P. Spatz
• E-Jahr: 2010
• Jahr: 10 March 2010
• Umfang: 8 S.
• Fussnoten: Gesehen am 12.04.2023
• Titel Quelle: Enthalten in: American Chemical SocietyACS nano
• Ort Quelle: Washington, DC : Soc., 2007
• Jahr Quelle: 2010
• Band/Heft Quelle: 4(2010), 4, Seite 1805-1812
• ISSN Quelle: 1936-086X
• DOI: doi:10.1021/nn900969y
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1842045237

Abstract

Silicon one-dimensional (Si 1D) materials are of particular relevance due to their prospect as versatile building materials for nanoelectronic devices. We report the growth of Si 1D structures from quasi-hexagonally ordered gold (Au) nanoparticle (NP) arrays on borosilicate glass (BSG) and SiOx/Si substrates. Using hydrogen instead of oxygen plasma during NP preparation enhances the catalytic activity of AuNPs (diameters of 10−20 nm), enabling Si 1D growth at temperatures as low as 320 °C. On BSG, Si nanowires (SiNWs) are identified and reasonable vertical alignment is achieved at 420 °C. On SiOx/Si, only Si nanotubes (SiNTs) are obtained right up to 420 °C. A mixture of SiNTs and SiNWs is observed at 450 °C and only SiNWs grow at 480 °C.