Status: Bibliographieeintrag
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| |  Online-Ressource |
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| Verfasst von: | Ruf, Bernhard [VerfasserIn]  |
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| | Behrendt, Frank [VerfasserIn] |
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| | Deutschmann, Olaf [VerfasserIn] |
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| | Warnatz, Jürgen [VerfasserIn] |
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| Titel: | Simulation of homoepitaxial growth on the diamond (100) surface using detailed reaction mechanisms |
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| Verf.angabe: | Bernhard Ruf, Frank Behrendt, Olaf Deutschmann, Jürgen Warnatz |
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| Jahr: | 1996 |
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| Umfang: | 5 S. |
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| Fussnoten: | Elektronische Reproduktion der Druck-Ausgabe 6. April 2000 ; Gesehen am 09.05.2023 |
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| Titel Quelle: | Enthalten in: Surface science |
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| Ort Quelle: | Amsterdam : Elsevier, 1964 |
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| Jahr Quelle: | 1996 |
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| Band/Heft Quelle: | 352-354(1996), Seite 602-606 |
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| ISSN Quelle: | 1879-2758 |
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| Abstract: | One-dimensional reactive-flow simulations of a hot-filament CVD-system including detailed surface reaction mechanisms for homoepitaxial diamond growth are carried out. A growth model for the diamond (100) surface based on elementary chemical reactions steps is introduced. This surface reaction scheme includes the incorporation of the CH3 radical in the diamond lattice. Homoepitaxial growth on the (100) surface is modelled for a wide range of experimental reactor parameters. The experimental growth rates are compared with simulations for two different surface reaction schemes. It is found that the scheme based on growth at monoatomic steps on the reconstructed (100) surface is more realistic. It shows qualitative agreement with experimental data, whereas the more simple mechanism for an unrealistic unreconstructed (100) surface cannot explain the surface temperature dependence of the growth rate correctly. |
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| DOI: | doi:10.1016/0039-6028(95)01210-9 |
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| URL: | Bitte beachten Sie: Dies ist ein Bibliographieeintrag. Ein Volltextzugriff für Mitglieder der Universität besteht hier nur, falls für die entsprechende Zeitschrift/den entsprechenden Sammelband ein Abonnement besteht oder es sich um einen OpenAccess-Titel handelt.
Volltext: https://doi.org/10.1016/0039-6028(95)01210-9 |
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| | Volltext: https://www.sciencedirect.com/science/article/pii/0039602895012109 |
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| | DOI: https://doi.org/10.1016/0039-6028(95)01210-9 |
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| Datenträger: | Online-Ressource |
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| Sprache: | eng |
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| Sach-SW: | Computer simulations |
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| | Diamond |
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| | Growth |
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| | Low index single crystal surfaces |
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| | Models of surface kinetics |
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| | Solid-gas interfaces |
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| | Surface chemical reaction |
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| K10plus-PPN: | 1844908100 |
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| Verknüpfungen: | → Zeitschrift |
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Simulation of homoepitaxial growth on the diamond (100) surface using detailed reaction mechanisms / Ruf, Bernhard [VerfasserIn]; 1996 (Online-Ressource)
69073688
