Electrolyte-gated n-type transistors produced from aqueous inks of WS2 nanosheets

• Verfasst von: Higgins, Thomas M. [VerfasserIn]
• Verfasst von: Matthiesen, Maik [VerfasserIn]
• Verfasst von: Grieger, Sebastian [VerfasserIn]
• Verfasst von: Synnatschke, Kevin [VerfasserIn]
• Verfasst von: Brohmann, Maximilian [VerfasserIn]
• Verfasst von: Rother, Marcel [VerfasserIn]
• Verfasst von: Backes, Claudia [VerfasserIn]
• Verfasst von: Zaumseil, Jana [VerfasserIn]
• Titel: Electrolyte-gated n-type transistors produced from aqueous inks of WS2 nanosheets
• Verf.angabe: Thomas M. Higgins, Sean Finn, Maik Matthiesen, Sebastian Grieger, Kevin Synnatschke, Maximilian Brohmann, Marcel Rother, Claudia Backes, and Jana Zaumseil*
• Jahr des Originals: 2018
• Fussnoten: Published online: December 11, 2018 ; Gesehen am 04.03.2019 ; Im Text ist die Zahl "2" tiefgestellt
• Titel Quelle: Enthalten in: Advanced functional materials
• Jahr Quelle: 2019
• Band/Heft Quelle: 29(2019,4) Artikel-Nummer 1804387, 9 Seiten
• ISSN Quelle: 1616-3028
• DOI: doi:10.1002/adfm.201804387
• Datenträger: Online-Ressource
• Sprache: eng
• K10plus-PPN: 1588279340

Abstract

Solution-processed, low cost thin films of layered semiconductors such as transition metal dichalcogenides (TMDs) are potential candidates for future printed electronics. Here, n-type electrolyte-gated transistors (EGTs) based on porous WS2 nanosheet networks as the semiconductor are demonstrated. The WS2 nanosheets are liquid phase exfoliated to form aqueous/surfactant stabilized inks, and deposited at low temperatures (T < 120 °C) in ambient atmosphere by airbrushing. No solvent exchange, further additives, or complicated processing steps are required. While the EGTs are primarily n-type (electron accumulation), some hole transport is also observable. The EGTs show current modulations > 104 with low hysteresis, channel width-normalized on-conductances of up to 0.27 µS µm−1 and estimated electron mobilities around 0.01 cm2 V−1 s−1. In addition, the WS2 nanosheet networks exhibit relatively high volumetric capacitance values of 30 F cm−3. Charge transport within the network depends significantly on the applied lateral electric field and is thermally activated, which supports the notion that hopping between nanosheets is a major limiting factor for these networks and their future application.